Comparison of Equivalent Oxide Thickness and Electrical Properties of Atomic Layer Deposited Hafnium Zirconate Dielectrics with Thermal or Decoupled Plasma Nitridation Process

被引：5

作者：

Chiang, Chen-Kuo ^{[1
,3
]}

Wu, Chien-Hung ^{[2
]}

Liu, Chin-Chien ^{[3
]}

Lin, Jin-Fu ^{[3
]}

Yang, Chien-Lun ^{[3
]}

Wu, Jiun-Yuan ^{[3
]}

Wang, Shui-Jinn ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

[2] Chung Hua Univ, Dept Elect Engn, Hsinchu 30012, Taiwan

[3] United Microelect Corp, Hsinchu 300, Taiwan

来源：

ELECTRONIC MATERIALS LETTERS | 2012年 / 8卷 / 05期

关键词：

ALD; HfZrO2; nitridation; EOT; scalability; GATE DIELECTRICS; SPECTROSCOPIC ELLIPSOMETRY; THIN-FILMS; NITROGEN; MOSFETS; SILICON; HFO2;

D O I：

10.1007/s13391-012-2030-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The NH3 thermal annealing and decoupled plasma nitridation (DPN) processes are compared for the equivalent oxide thickness (EOT) scaling of atomic-layer-deposited hafnium zirconate (HfZrO2) gate dielectric. Detailed physical, optical, and electrical characteristics of nitrided HIZrO2 (HfZrON) film are reported. It is found that DPN can yield a thinner SiOx interfacial layer (IL) (about 0.12 nm more in terms of EOT scaling) and a more densified HfZrO2 layer compared to those obtained using NH3 thermal annealing at a 16% nitrogen dose. NH3 thermal nitridation causes a large nitrogen distribution tail at the SiOx IL/Si substrate interface and increases leakage current, which suppresses EOT scalability.

引用

页码：535 / 539

页数：5

共 18 条

[1]

Cartier E., 2006, IEDM, P321

[2] Spectroscopic ellipsometry characterization of high-k dielectric HfO2 thin films and the high-temperature annealing effects on their optical properties [J].

Cho, YJ ;

Nguyen, NV ;

Richter, CA ;

Ehrstein, JR ;

Lee, BH ;

Lee, JC .

APPLIED PHYSICS LETTERS, 2002, 80 (07) :1249-1251

[3] Generalized scale length for two-dimensional effects in MOSFET's [J].

Frank, DJ ;

Taur, Y ;

Wong, HSP .

IEEE ELECTRON DEVICE LETTERS, 1998, 19 (10) :385-387

[4] Compositional and electrical properties of zirconium dioxide thin films chemically deposited on silicon [J].

Harasek, S ;

Wanzenboeck, HD ;

Bertagnolli, E .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2003, 21 (03) :653-659

[5] Modeling of tunneling currents through HfO2 and (HfO2)x (Al2O3)1-x gate stacks [J].

Hou, YT ;

Li, MF ;

Yu, HY ;

Kwong, DL .

IEEE ELECTRON DEVICE LETTERS, 2003, 24 (02) :96-98

[6] Plasma-nitrided high-k polycrystalline nano-array induced by electron irradiation [J].

Huang, A. P. ;

Wang, L. ;

Xu, J. B. ;

Chu, Paul K. .

NANOTECHNOLOGY, 2006, 17 (17) :4379-4383

[7] Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High-k/Metal Gate Stacks Directly on SiGe [J].

Huang, Jeff ;

Kirsch, Paul D. ;

Oh, Jungwoo ;

Lee, Se Hoon ;

Majhi, Prashant ;

Harris, H. Rusty ;

Gilmer, Daivd C. ;

Bersuker, Germadi ;

Heh, Dawei ;

Park, Chang Seo ;

Park, Chanro ;

Tseng, Hsing-Huang ;

Jammy, Raj .

IEEE ELECTRON DEVICE LETTERS, 2009, 30 (03) :285-287

[8] High-resolution RBS: a powerful tool for atomic level characterization [J].

Kimura, K ;

Joumori, S ;

Oota, Y ;

Nakajima, K ;

Suzuki, M .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2004, 219 :351-357

[9] Cubic-HfN formation in Hf-based high-k gate dielectrics with N incorporation and its impact on electrical properties of films [J].

Koyama, M ;

Kamimuta, Y ;

Koike, M ;

Ino, T ;

Nishiyama, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (4B) :2311-2315

[10] Evolution of leakage paths in HfO2/SiO2 stacked gate dielectrics:: A stable direct observation by ultrahigh vacuum conducting atomic force microscopy -: art. no. 063510 [J].

Kyuno, K ;

Kita, K ;

Toriumi, A .

APPLIED PHYSICS LETTERS, 2005, 86 (06) :1-3

← 1 2 →