Metalorganic chemical vapor deposition of ferroelectric Pb(ZrxTi1-x)O-3 thin films

被引：4

作者：

Chung, CW

Kim, D

机构：

[1] Electronic Materials Lab., Samsung Adv. Institute of Technology, Suwon 440-600

来源：

KOREAN JOURNAL OF CHEMICAL ENGINEERING | 1997年 / 14卷 / 02期

关键词：

MOCVD; PZT; thin film; ferroelectric; FRAM;

D O I：

10.1007/BF02706073

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Ferroelectric Pb(ZrxTi1-x)O-3 (PZT) thin films were successfully deposited on Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition (MOCVD). Pb(C2H5)(4), Zr(O-t-C4H9)(4), and Ti(O-i-C3H7)(4) were used as metalorganic precursors. Variations in crystalline structure, surface morphology, and grain size of deposited films were systematically investigated as a function of process parameters by using X-ray diffraction and scanning electron microscopy. The deposition temperature and gas composition in the reactor are the main parameters that control the microstructure and composition of films. An interrelationship between the grain orientation and surface roughness of the films was found. Films with (111) preferred orientation are significantly smoother than films with other preferred orientations. The ferroelectric properties of the films were also measured by RT66A ferroelectric tester for hysteresis loop and fatigue property. Electrical measurements revealed that the films had good ferroelectric characteristics with the high remanant polarization (32 mu C/cm(2)) and low coercive voltage (1.1 V).

引用

页码：136 / 140

页数：5

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