Optical anisotropy in 5-nm-scale T-shaped quantum wires fabricated by the cleaved-edge overgrowth method

被引：54

作者：

Akiyama, H ^{[1
]}

Someya, T ^{[1
]}

Sakaki, H ^{[1
]}

机构：

[1] UNIV TOKYO, ADV SCI & TECHNOL RES CTR, TOKYO 153, JAPAN

来源：

PHYSICAL REVIEW B | 1996年 / 53卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.53.R4229

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Optical anisotropy has been evaluated in terms of polarization dependence of photoluminescence (PL) and PL excitation (PLE) spectra for 5-nm-scale GaAs/AlAs T-shaped quantum wires (T-QWR's). They were prepared by the cleaved-edge overgrowth method, and their potential profile was previously characterized by spatially resolved PL measurements. The PL and PLE signals for T-QWR's showed stronger polarization along the T-QWR's. Comparing T-QWR's with a reference QW grown on a (110) surface, we clarified the optical anisotropy induced purely by the lateral confinement in T-QWR's.

引用

页码：R4229 / R4232

页数：4

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