Resonant-cavity InGaN multiple-quantum-well green light-emitting diode grown by molecular-beam epitaxy

被引：48
作者：
Naranjo, FB
Fernández, S
Sánchez-García, MA
Calle, F
Calleja, E
机构：
[1] Univ Politecn Madrid, ISOM, E-28040 Madrid, Spain
[2] Univ Politecn Madrid, ETSI Telecomun, Dept Ingn Elect, E-28040 Madrid, Spain
来源：
APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 12期
关键词：
D O I：
10.1063/1.1463701
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A resonant-cavity InGaN/GaN multiple-quantum-well (MQW) light-emitting diode, incorporating a semitransparent Bragg reflector, has been grown by molecular-beam epitaxy. A 30% reflectivity AlGaN/GaN distributed Bragg reflector and a Ni coating were used as bottom and top mirrors, for backside emission. High-resolution x-ray diffraction data reveal high-quality interfaces in both the MQW and the Bragg mirror. Room-temperature electroluminescence is centered at 507 nm, with an estimated output power of 5 muW at 20 mA. The external efficiency is increased by a factor of 12 compared to similar structures without resonant cavity. (C) 2002 American Institute of Physics.
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页码：2198 / 2200
页数：3
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