Spike-Timing-Dependent Plasticity Using Biologically Realistic Action Potentials and Low-Temperature Materials

被引:27
|
作者
Subramaniam, Anand [1 ]
Cantley, Kurtis D. [2 ]
Bersuker, Gennadi [3 ]
Gilmer, David C. [3 ]
Vogel, Eric M. [4 ]
机构
[1] Univ Texas Dallas, Dept Elect Engn, Richardson, TX 75080 USA
[2] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA
[3] SEMATECH, Albany, NY 12203 USA
[4] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
关键词
Low-temperature nanoelectronics; memristor; neuromorphic circuit; spike-timing-dependent plasticity; synapse; SYNAPTIC MODIFICATION; SYNAPSES; NUMBER; DEVICE;
D O I
10.1109/TNANO.2013.2256366
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Spike-timing-dependent plasticity (STDP) is a fundamental learning rule observed in biological synapses that is desirable to replicate in neuromorphic electronic systems. Nanocrystalline-silicon thin film transistors (TFTs) and memristors can be fabricated at low temperatures, and are suitable for use in such systems because of their potential for high density, 3-D integration. In this paper, a compact and robust learning circuit that implements STDP using biologically realistic nonmodulated rectangular voltage pulses is demonstrated. This is accomplished through the use of a novel nanoparticle memory-TFT with short retention time at the output of the neuron circuit that drives memristive synapses. Similarities to biological measurements are examined with single and repeating spike pairs or different timing intervals and frequencies, as well as with spike triplets.
引用
收藏
页码:450 / 459
页数:10
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