Band Gap Tunable N-Type Molecules for Organic Field Effect Transistors

被引：12

作者：

Glowatzki, H. ^{[1
]}

Sonar, P. ^{[2
]}

Singh, S. P. ^{[2
,4
]}

Mak, A. M. ^{[5
]}

Sullivan, M. B. ^{[5
]}

Chen, W. ^{[1
]}

Wee, A. T. S. ^{[1
]}

Dodabalapur, A. ^{[2
,3
]}

机构：

[1] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

[2] Agcy Sci Technol & Res, Inst Mat Res & Engn, Singapore 117602, Singapore

[3] Univ Texas Austin, Microelect Res Ctr, Austin, TX 78758 USA

[4] Shiv Nadar Univ, Greater Noida, India

[5] Agcy Sci Technol & Res, Inst High Performance Comp, Singapore 138632, Singapore

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2013年 / 117卷 / 22期

关键词：

THIN-FILM TRANSISTORS; HIGH-ELECTRON-MOBILITY; DESIGN; SEMICONDUCTORS; PENTACENE; GROWTH; FLUORINATION; ORIENTATION; CHALLENGES; MORPHOLOGY;

D O I：

10.1021/jp311092s

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A series of four novel n-type molecules has been synthesized. Unlike previous approaches, the end group of these molecules was fixed and the molecular core was varied. The resulting materials were thoroughly analyzed. Electronic properties were derived from photoemission spectroscopy, optical properties were derived with the help of optical spectroscopy, and the structure of thin films on Au(111) was derived by scanning tunneling microscopy (STM). In addition, prototypical organic field-effect transistors (OFETs) (forming n-channels in OFETs) have been fabricated and tested. The correlation between the device performance of the respective OFETs (i.e., electron mobility) and their electronic as well as structural properties was investigated. It turned out that a combination of beneficial electronic and structural properties provides the best results. These findings are important for the design of new materials for future device applications.

引用

页码：11530 / 11539

页数：10

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