A comparison of substrate noise coupling in lightly and heavily doped CMOS processes for 2.4-GHz LNAs

被引：17

作者：

Hazenboom, S ^{[1
]}

Fiez, TS

Mayaram, K

机构：

[1] Adv Navigat & Positioning, Hood River, OR 97031 USA

[2] Oregon State Univ, Dept Elect & Comp Engn, Corvallis, OR 97331 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2006年 / 41卷 / 03期

关键词：

amplifiers; heavily doped substrate; lightly doped substrate; low-noise amplifier; noise coupling; substrate noise coupling;

D O I：

10.1109/JSSC.2006.869790

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper examines the substrate noise injected into three different types of 2.4-GHz; low-noise amplifiers for both heavily and lightly doped CMOS substrates. The amplifiers include the commonly used single-ended and differential topologies as well as a new quasi-differential amplifier. For the single-ended amplifier, the noise coupling modeled in SPICE is in good agreement with measurements. Using these models and simulations, the major noise coupling mechanisms are identified and methods of noise mitigation are evaluated. In the differential amplifier, it is shown that even though the substrate noise is common mode, the intermodulation noise is not reduced. The quasi-differential amplifier performance is comparable to the differential amplifier for lightly doped substrates.

引用

页码：574 / 587

页数：14

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