Real time observation of the directional solidification of multicrystalline silicon: X-ray imaging characterization

被引：24

作者：

Tandjaoui, A. ^{[1
,2
]}

Mangelinck-Noel, N. ^{[1
,2
]}

Reinhart, G. ^{[1
,2
]}

Furter, J-J ^{[1
,2
]}

Billia, B. ^{[1
,2
]}

Lafford, T. ^{[3
]}

Baruchel, J. ^{[3
]}

Guichard, X. ^{[3
]}

机构：

[1] Aix Marseille Univ, Campus St Jerome,Case 142, F-13397 Marseille 20, France

[2] CNRS, IM2NP, UMR CNRS 7334, F-13397 Marseille 20, France

[3] European Synchrotron Radiat Facil, Polygone Sci Louis Neel, F-38043 Grenoble, France

来源：

PROCEEDINGS OF THE 2ND INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2012) | 2012年 / 27卷

关键词：

Silicon; photovoltaic; solidification; X-ray imaging; POLYCRYSTALLINE SILICON; MELT;

D O I：

10.1016/j.egypro.2012.07.033

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Directional solidification of multicrystalline silicon for photovoltaic applications is investigated by means of synchrotron X-ray imaging techniques at the European Synchrotron Radiation Facility. Our experimental device combines two complementary modes: X-ray radiography imaging giving information on the dynamical evolution of the solid/liquid interface and X-ray topography giving information on the grain structure and phenomena occurring during the solidification process such as strains and twinning. In this paper, we report on the experimental details of the developed device and on some preliminary results obtained by using both imaging techniques. (C) 2012 Published by Elsevier Ltd. Selection and peer-review under responsibility of the scientific committee of the SiliconPV 2012 conference.

引用

页码：82 / 87

页数：6

共 9 条

[1]

Authier A, 1996, NATO ASI SERIES

[2] One-dimensional model of the equiaxed grain formation in multi-crystalline silicon [J].

Beaudhuin, M. ;

Duffar, T. ;

Lemiti, M. ;

Zaidat, K. .

JOURNAL OF CRYSTAL GROWTH, 2011, 319 (01) :106-113

[3] Multicrystalline silicon wafers prepared from upgraded metallurgical feedstock [J].

Degoulange, J. ;

Perichaud, I. ;

Trassy, C. ;

Martinuzzi, S. .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2008, 92 (10) :1269-1273

[4] Grain growth behaviors of polycrystalline silicon during melt growth processes [J].

Fujiwara, K ;

Obinata, Y ;

Ujihara, T ;

Usami, N ;

Sazaki, G ;

Nakajima, K .

JOURNAL OF CRYSTAL GROWTH, 2004, 266 (04) :441-448

[5] In situ observations of crystal growth behavior of silicon melt [J].

Fujiwara, K ;

Nakajima, K ;

Ujihara, T ;

Usami, N ;

Sazaki, G ;

Hasegawa, H ;

Mizoguchi, S ;

Nakajima, K .

JOURNAL OF CRYSTAL GROWTH, 2002, 243 (02) :275-282

[6] Modelling of the transition from a planar faceted front to equiaxed growth: Application to photovoltaic polycrystalline silicon [J].

Mangelinck-Noel, Nathalie ;

Duffar, Thierry .

JOURNAL OF CRYSTAL GROWTH, 2008, 311 (01) :20-25

[7] Factors limiting minority carrier lifetime in solar grade silicon produced by the metallurgical route [J].

Osinniy, V. ;

Bomholt, P. ;

Larsen, A. Nylandsted ;

Enebakk, E. ;

Soiland, A. -K. ;

Tronstad, R. ;

Safir, Y. .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2011, 95 (02) :564-572

[8] ELECTRONIC-PROPERTIES OF GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON [J].

OUALID, J ;

AMZIL, H ;

CREST, JP ;

DUGAS, J ;

MATHIAN, G ;

ZEHAF, M ;

MARTINUZZI, S .

JOURNAL DE PHYSIQUE, 1982, 43 (NC1) :313-318

[9]

Thierry Duffar, 2010, RECENT RES DEV CRYST, V5, P61

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