Design and Simulation of Low Noise Amplifier in Lower Frequency

被引：0

作者：

Zhao, Peng ^{[1
]}

Li, Fan ^{[1
]}

Zhao, Jianhui ^{[1
]}

Ding, Jin ^{[1
]}

机构：

[1] Beihang Univ, 37 Xueyuan Rd, Beijing, Peoples R China

来源：

Proceedings of the 2016 4th International Conference on Machinery, Materials and Information Technology Applications | 2016年 / 71卷

关键词：

low frequency; low noise amplifier; JFET; high gain;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

In order to amplify the output signal of an infrared detector, this paper analyzes the principle of infrared detector and noise characteristics of the amplifier circuit, and based on JFET devices and operational amplifiers a low frequency low noise amplifier is designed. The simulation shows that the gain is as high as 92 dB and the equivalent input noise voltage density within the main frequency is lower than 6.1 nV root Hz. This circuit is an ideal circuit of high gain and low noise for sensors with high output impedance especially for the infrared detector..

引用

页码：465 / 468

页数：4