Low-Voltage Organic Field-Effect Transistors for Flexible Electronics

被引：0

作者：

Zschieschang, Ute ^{[1
]}

Roedel, Reinhold ^{[1
]}

Kraft, Ulrike ^{[1
]}

Takimiya, Kazuo ^{[2
]}

Zaki, Tarek ^{[3
]}

Letzkus, Florian ^{[4
]}

Butschke, Joerg ^{[4
]}

Richter, Harald ^{[4
]}

Burghartz, Joachim N. ^{[4
]}

Xiong, Wei ^{[5
]}

Murmann, Boris ^{[5
]}

Klauk, Hagen ^{[1
]}

机构：

[1] Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany

[2] RIKEN Adv Sci Inst, Emergent Mol Funct Res Team, Wako, Saitama, Japan

[3] Univ Stuttgart, Inst Nano & Microelect Syst INES, Stuttgart, Germany

[4] Inst Mikroelekt IMS CHIPS, Stuttgart, Germany

[5] Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA

来源：

2014 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM) | 2014年

关键词：

THIN-FILM TRANSISTORS; MEGAHERTZ OPERATION; N-TYPE; PERFORMANCE; MOBILITY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A process for the fabrication of bottom-gate, top-contact (inverted staggered) organic thin-film transistors (TFTs) with channel lengths as short as 1 mu m on flexible plastic substrates has been developed. The TFTs employ vacuum-deposited small-molecule semiconductors and a low-temperature-processed gate dielectric that is sufficiently thin to allow the TFTs to operate with voltages of about 3 V. The p-channel TFTs have an effective field-effect mobility of about 1 cm(2)/Vs, an on/off ratio of 10(7), and a signal propagation delay (measured in 11-stage ring oscillators) of 300 ns per stage. For the n-channel TFTs, an effective field-effect mobility of about 0.06 cm(2)/Vs, an on/off ratio of 10(6), and a signal propagation delay of 17 mu s per stage have been obtained.

引用

页码：100 / 106

页数：7

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