Special-lines approximation to Brillouin zone integration: Improved set of special lines (vol 11, pg 187, 1996)

被引：1

作者：

Enders, P ^{[1
]}

机构：

[1] MAX BORN INST NICHTLINEARE OPT & KURZZEITSPEKTROS, D-12489 BERLIN, GERMANY

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1996年 / 11卷 / 12期

关键词：

D O I：

10.1088/0268-1242/11/12/027

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Kane's Y-star of k-vectors is described in detail for including it into the special-lines approximation presented recently [1], which reduces 3D Brillouin zone integrals to 1D ones. The account for the anisotropy of the k . p hole bands in GaAs-like semiconductors becomes almost exact, as shown by an example (the band non-parabolicity is treated without approximation.

引用

页码：1927 / 1929

页数：3

共 4 条

[1] K-CENTER-DOT-P THEORY OF ENERGY-BANDS, WAVE-FUNCTIONS, AND OPTICAL SELECTION-RULES IN STRAINED TETRAHEDRAL SEMICONDUCTORS [J].

ENDERS, P ;

BARWOLFF, A ;

WOERNER, M ;

SUISKY, D .

PHYSICAL REVIEW B, 1995, 51 (23) :16695-16704

[2] Special-lines approximation to Brillouin zone integration [J].

Enders, P .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (02) :187-189

[3]

ENDERS P, 1996, C LAS EL OPT CLEO 96

[4] ENERGY BAND STRUCTURE IN P-TYPE GERMANIUM AND SILICON [J].

KANE, EO .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) :82-99

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