Numerical simulation for parameter optimization of silicon purification by electron beam melting

被引：27

作者：

Tan, Yi ^{[1
,2
]}

Wen, Shutao ^{[1
,2
]}

Shi, Shuang ^{[1
,2
]}

Jiang, Dachuan ^{[1
,2
]}

Dong, Wei ^{[1
,2
]}

Guo, Xiaoliang ^{[1
,2
]}

机构：

[1] Dalian Univ Technol, Sch Mat Sci & Engn, Dalian 116023, Peoples R China

[2] Key Lab Solar Energy Photovolta Syst Liaoning Pro, Dalian 116023, Peoples R China

来源：

VACUUM | 2013年 / 95卷

基金：

中国国家自然科学基金;

关键词：

Numerical simulation; Temperature field; Evaporation; Purification; Phosphorus; Silicon; METALLURGICAL GRADE SILICON; MOLTEN SILICON; POLYCRYSTALLINE SILICON; PHOSPHORUS; REMOVAL; THERMODYNAMICS; ALUMINUM;

D O I：

10.1016/j.vacuum.2013.02.002

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper a mathematical model is developed to investigate the removal of volatile impurities in molten silicon by electron beam melting (EBM) with a high efficiency and low energy consumption. The temperature distribution of molten silicon is obtained using the commercial software FLUENT. Based on the temperature distribution, the vaporization behaviors of phosphorus and silicon are investigated by Langmiur's vaporization theory. The results show that the evaporation rate of silicon during EBM increases exponentially with the increase of beam power, while, it decreases with the increase of scanning radius. The optimal parameters are discussed from the aspect of efficiency and energy saving. The energy consumption decreases with the decrease of scanning radius and with the increase of the beam power. The optimum values are consider to be with a scanning radius of 0.0339 m and a beam power of 23.4 kW for 0.5 kg silicon when phosphorus is removed from 1.44 x 10(-2) to 1 x 10(-5) (wt.%). (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：18 / 24

页数：7

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