Diffusion current and its effect on noise in submicron MOSFETs

被引：18

作者：

Obrecht, MS ^{[1
]}

Abou-Allam, E

Manku, T

机构：

[1] Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada

[2] Siborg Syst Inc, Waterloo, ON N2L 5B1, Canada

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2002年 / 49卷 / 03期

关键词：

MOSFET; numerical simulation; shot noise; thermal noise;

D O I：

10.1109/16.987126

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a significant shot noise component in submicron metal-oxide-semiconductor field effect transistors (MOSFETs) operating in strong inversion. A quasi-three-dimensional (3-D) MOSFET simulation was used to compare simulated noise parameters to measured data and to verify the model. For long channel devices, thermal noise was confirmed to be the main source of noise in accord with the conventional theory. In contrast, for submicron devices the shot noise appeared to be dominant. The shot noise component is primarily produced near the source of the device and is believed to be caused by the diffusion current.

引用

页码：524 / 526

页数：3

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