Decay lengths for diffusive transport activated by Andreev reflections in Al/n-GaAs/Al superconductor-semiconductor-superconductor junctions

被引：61

作者：

Kutchinsky, J ^{[1
]}

Taboryski, R ^{[1
]}

Clausen, T ^{[1
]}

Sorensen, CB ^{[1
]}

Kristensen, A ^{[1
]}

Lindelof, PE ^{[1
]}

Hansen, JB ^{[1
]}

Jacobsen, CS ^{[1
]}

Skov, JL ^{[1
]}

机构：

[1] TECH UNIV DENMARK,DEPT PHYS,DK-2800 LYNGBY,DENMARK

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 78卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.78.931

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In a highly doped GaAs semiconductor with superconducting contacts of Al, clear conductance peaks are observed at zero voltage bias and at V = +/-2 Delta/e, +/-Delta/e. The subharmonic energy gap structure originates from Andreev scattering with diffusive, but energy conserving, transport in the GaAs. The zero bias excess conductance is due to phase-coherent transport. Both effects are suppressed when the distance between the superconducting electrodes exceeds the inelastic diffusion length in the GaAs normal channel.

引用

页码：931 / 934

页数：4

共 21 条

[1]

ANDREEV AF, 1964, SOV PHYS JETP-USSR, V19, P1228

[2] TRANSITION FROM METALLIC TO TUNNELING REGIMES IN SUPERCONDUCTING MICRO-CONSTRICTIONS - EXCESS CURRENT, CHARGE IMBALANCE, AND SUPER-CURRENT CONVERSION [J].