Spatial Atomic Layer Deposition of Aluminum Oxide as a Passivating Hole Contact for Silicon Solar Cells

被引：9

作者：

Ogutman, Kortan ^{[1
,2
,3
]}

Iqbal, Nafis ^{[4
,5
]}

Gregory, Geoffrey ^{[4
,5
]}

Li, Mengjie ^{[4
,5
]}

Haslinger, Michael ^{[6
]}

Cornagliotti, Emanuele ^{[7
]}

Schoenfeld, Winston, V ^{[1
,2
,3
,4
,5
]}

John, Joachim ^{[8
]}

Davis, Kristopher O. ^{[2
,3
,4
,5
]}

机构：

[1] Univ Cent Florida, Dept Elect Engn & Comp Sci, Orlando, FL 32826 USA

[2] Univ Cent Florida, Coll Opt & Photon, CREOL, Orlando, FL 32816 USA

[3] Univ Cent Florida, Florida Solar Energy Ctr, Cocoa, FL 32922 USA

[4] Univ Cent Florida, Dept Mat Sci & Engn, Orlando, FL 32816 USA

[5] Univ Cent Florida, Resilient Intelligent Sustainable Energy Syst Fac, Orlando, FL 32816 USA

[6] Thales Alenia Space, Rue Chapelle Beaussart 94-100, B-6030 Charleroi, Belgium

[7] Kaneka Belgium NV, Lenneke Marelaan 4, B-1932 Zaventem, Belgium

[8] IMEC Partner EnergyVille, Kapeldreef 75, B-3001 Leuven, Belgium

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2020年 / 217卷 / 18期

关键词：

atomic layer deposition; passivating contacts; silicon; solar cells; surface passivation; SELECTIVE CONTACTS; EFFICIENCY;

D O I：

10.1002/pssa.202000348

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Herein, tunneling aluminum oxide (Al2O3) passivation layers are demonstrated to be a candidate for hole collecting, passivating contacts when coupled with a boron-doped surface. These very thin Al(2)O(3)films (1.5-3 nm) are deposited using spatial atomic layer deposition (ALD) on boron diffused (110-115 Omega square(-1)) hydrophilic surfaces operating as metal-insulator-semiconductor (MIS) contacts. The emitter saturation current density values of approximate to 57 fA cm(-2)are achieved for the Al2O3 film thicknesses of 2 nm before metallization. At this same thickness, the contact resistivity values of 33 m Omega cm(2) are obtained after metallization. Most importantly, the boron diffusion, wet chemical surface preparation, and spatial ALD of Al2O3 used to create these MIS structures are all performed with industrially relevant equipment on Cz wafers.

引用

页数：6

共 44 条

[1] Transmission electron microscopy based interface analysis of the origin of the variation in surface recombination of silicon for different surface preparation methods and passivation materials [J].