AlGaN/GaN/AlGaN ultraviolet photodetectors on Si

被引：0

作者：

Jiang, RL ^{[1
]}

Zhao, ZM ^{[1
]}

Chen, P ^{[1
]}

Xi, DJ ^{[1
]}

Shen, B ^{[1
]}

Zhang, R ^{[1
]}

Zheng, YD ^{[1
]}

机构：

[1] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

来源：

SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS | 2001年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaN/GaN/AlGaN ultraviolet photodetectors were grown on Si (111) substrates using an AlN buffer by metalorganic chemical vapor deposition. These detectors showed a high response in a narrow range of wavelength with a peak position at 365 nm. A peak responsivity of 24 A/W was obtained at 5.5 V bias. This high responsivity is mainly due to the high polarization electric-field in GaN layer of AlGaN/GaN/AlGaN heterojunction structure and the potential wells at AlGaN/GaN interfaces.

引用

页码：1286 / 1288

页数：3

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