AlGaN/GaN/AlGaN ultraviolet photodetectors on Si

被引:0
|
作者
Jiang, RL [1 ]
Zhao, ZM [1 ]
Chen, P [1 ]
Xi, DJ [1 ]
Shen, B [1 ]
Zhang, R [1 ]
Zheng, YD [1 ]
机构
[1] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
来源
SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS | 2001年
关键词
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
AlGaN/GaN/AlGaN ultraviolet photodetectors were grown on Si (111) substrates using an AlN buffer by metalorganic chemical vapor deposition. These detectors showed a high response in a narrow range of wavelength with a peak position at 365 nm. A peak responsivity of 24 A/W was obtained at 5.5 V bias. This high responsivity is mainly due to the high polarization electric-field in GaN layer of AlGaN/GaN/AlGaN heterojunction structure and the potential wells at AlGaN/GaN interfaces.
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收藏
页码:1286 / 1288
页数:3
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