Development of Silicon Strip Sensors and radiation hardness studies for the PANDA MVD

被引：0

作者：

Quagli, Tommaso ^{[1
]}

Brinkmann, Kai-Thomas ^{[1
]}

Deermann, Dariusch

Schnell, Robert ^{[1
]}

Tummo, Juraphan

Zaunick, Hans Georg

机构：

[1] Univ Giessen, Phys Inst 2, Giessen, Germany

来源：

2012 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE RECORD (NSS/MIC) | 2012年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

PANDA is one of the major experiments at the future FAIR facility and the Micro Vertex Detector (MVD) is the innermost part of its tracking system. It will be composed of double-sided silicon strip and hybrid pixel detectors and its main task is the high resolution vertex reconstruction. In order to characterize the sensors for the strip barrels of the PANDA MVD, a measurement setup has been developed and prototypes from a first batch have been successfully tested. Performed measurements include global C-V and I-V curves on the entire sensors, as well as single strip C-V characteristics and interstrip capacitances. The radiation hardness of the sensors has been studied using irradiations with neutrons and protons. Global C-V and I-V curves were evaluated before and after each irradiation. The variations of the leakage current and of the full depletion voltage have been studied over a broad range of applied fluences and the results are in good agreement with the predictions.

引用

页码：1365 / 1369

页数：5

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