New BN polymorphs with two-dimensional structure

被引:4
作者
Ryashentsev, D. S. [1 ]
Belenkov, E. A. [1 ]
机构
[1] Chelyabinsk State Univ, 129 Bratiev Kashirinykh Str, Chelyabinsk 454001, Russia
来源
INTERNATIONAL WORKSHOP ADVANCED TECHNOLOGIES IN MATERIAL SCIENCE, MECHANICAL AND AUTOMATION ENGINEERING - MIP: ENGINEERING - 2019 | 2019年 / 537卷
关键词
OPTICAL-PROPERTIES; BORON NITRIDES;
D O I
10.1088/1757-899X/537/2/022060
中图分类号
TH [机械、仪表工业];
学科分类号
0802 ;
摘要
The calculation of the structure and electronic characteristics of polymorphic varieties of boron nitride with a two-dimensional structure was performed by the methods of the density functional theory. The possibility of stable existence of three main structural varieties is established: BN-L-6, BN-L4-8 and BN-L4-6-12. The sublimation energies of these polymorphs of boron nitride are 18.14, 17.36, and 17.14 eV/(BN), respectively. The BN-L-6 layer has a structure similar to that of experimentally synthesized hexagonal boron nitride. The layers BN-L4-8 and BN-L4-6-12 are new polymorphic varieties of boron nitride. The band gap of these layers is about 3.9 eV. This value is less than the calculated value of 4.69 eV for the band gap of the BN-L-6 layer.
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页数:4
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