High-speed graded-channel AlGaN/GaN HEMTs with power added efficiency >70% at 30 GHz

被引：27

作者：

Moon, J. S. ^{[1
]}

Grabar, R. ^{[1
]}

Wong, J. ^{[1
]}

Antcliffe, M. ^{[1
]}

Chen, P. ^{[1
]}

Arkun, E. ^{[1
]}

Khalaf, I. ^{[1
]}

Corrion, A. ^{[1
]}

Chappell, J. ^{[1
]}

Venkatesan, N. ^{[2
]}

Fay, P. ^{[1
]}

机构：

[1] HRL Lab LLC, 3011 Malibu Canyon Rd, Malibu, CA 90265 USA

[2] Univ Notre Dame, Notre Dame, IN 46556 USA

来源：

ELECTRONICS LETTERS | 2020年 / 56卷 / 13期

关键词：

power measurement; aluminium compounds; wide band gap semiconductors; gallium compounds; high electron mobility transistors; III-V semiconductors; microwave field effect transistors; millimetre wave field effect transistors; semiconductor device measurement; power added efficiency; PAE; two-tone power measurement; novel channel design; high-speed graded-channel HEMTs; high-efficiency millimetre-wave power amplifiers; RF power density operation; size; 60; 0; nm; voltage; 10; V; frequency; 30; GHz; 14; efficiency; 75; percent; 65; AlGaN-GaN; PERFORMANCE; TRANSISTORS; GANHEMTS; GATE;

D O I：

10.1049/el.2020.0281

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report on highly scaled 60 nm gate length graded-channel AlGaN/GaN high electron mobility transistors (HEMTs) with a record power added efficiency (PAE) of 75% at 2.1 W/mm power density at Vdd = 10 V and the PAE of 65% at 3.0 W/mm power density at 30 GHz at Vdd = 14 V. Under two-tone power measurement, the graded-channel AlGaN/GaN HEMTs demonstrated similar power performance with peak PAE >70% at 30 GHz. This novel channel design shows great promise for high-efficiency millimetre-wave (mmW) power amplifiers up to 3 W/mm RF power density operation.

引用

页码：678 / 679

页数：2

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