Solution-Processed Zinc Oxide Thin-Film Transistors With a Low-Temperature Polymer Passivation Layer

被引：47

作者：

Xu, Xiaoli ^{[1
]}

Feng, Linrun ^{[1
]}

He, Shasha ^{[2
]}

Jin, Yizheng ^{[2
]}

Guo, Xiaojun ^{[1
]}

机构：

[1] Shanghai Jiao Tong Univ, Dept Elect Engn, Shanghai 200240, Peoples R China

[2] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 10期

基金：

中国国家自然科学基金;

关键词：

Passivation; solution process; thin-film transistor (TFT); zinc oxide (ZnO); FABRICATION;

D O I：

10.1109/LED.2012.2210853

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Bottom-gate top-contact zinc oxide (ZnO) thin-film transistors were fabricated with a low annealing temperature (150 degrees C) using ammine-hydroxo zinc precursors. The unpassivated devices present profound hysteresis in the measured current-voltage characteristics and a negative output conductance, which were attributed to the interaction of back surface with the oxygen molecules in the ambient atmosphere. To suppress the ambient influence without impacting the device's intrinsic performance, a simple low-temperature (75 degrees C) solution-based passivation approach with polydimethylsiloxane was developed. The passivated devices present typical field-effect transistor behaviors of greatly improved device performance.

引用

页码：1420 / 1422

页数：3

共 15 条

[1] High-Performance Zinc Oxide Transistors and Circuits Fabricated by Spray Pyrolysis in Ambient Atmosphere [J].

Bashir, Aneeqa ;

Woebkenberg, Paul H. ;

Smith, Jeremy ;

Ball, James M. ;

Adamopoulos, George ;

Bradley, Donal D. C. ;

Anthopoulos, Thomas D. .

ADVANCED MATERIALS, 2009, 21 (21) :2226-+

[2] Oxygen-Dependent Instability and Annealing/Passivation Effects in Amorphous In-Ga-ZnO Thin-Film Transistors [J].

Chen, Wei-Tsung ;

Lo, Shih-Yi ;

Kao, Shih-Chin ;

Zan, Hsiao-Wen ;

Tsai, Chuang-Chuang ;

Lin, Jian-Hong ;

Fang, Chun-Hsiang ;

Lee, Chung-Chun .

IEEE ELECTRON DEVICE LETTERS, 2011, 32 (11) :1552-1554

[3]

Chen YY, 2010, ADV ENG RES, V3, P1

[4] Passivation of Bottom-Gate IGZO Thin Film Transistors [J].

Cho, D. H. ;

Yang, S. H. ;

Shin, J. -H. ;

Byun, C. W. ;

Ryu, M. K. ;

Lee, J. I. ;

Hwang, C. S. ;

Chu, H. Y. .

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2009, 54 (01) :531-534

[5] Low-Temperature Organic (CYTOP) Passivation for Improvement of Electric Characteristics and Reliability in IGZO TFTs [J].

Choi, Sung-Hwan ;

Jang, Jun-Hyuk ;

Kim, Jang-Joo ;

Han, Min-Koo .

IEEE ELECTRON DEVICE LETTERS, 2012, 33 (03) :381-383

[6] Instabilities in Amorphous Oxide Semiconductor Thin-Film Transistors [J].

Conley, John F., Jr. .

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2010, 10 (04) :460-475

[7]

Herman GS, 2011, IDW, P1677

[8] Effect of annealing temperature on the electrical performances of solution-processed InGaZnO thin film transistors [J].

Hwang, Sooyeon ;

Lee, Ju Ho ;

Woo, Chang Ho ;

Lee, Jeong Yong ;

Cho, Hyung Koun .

THIN SOLID FILMS, 2011, 519 (15) :5146-5149

[9] Solution-processed ultraviolet photodetedtors based on colloidal ZnO nanoparticles [J].

Jin, Yizheng ;

Wang, Jianpu ;

Sun, Baoquan ;

Blakesley, James C. ;

Greenham, Neil C. .

NANO LETTERS, 2008, 8 (06) :1649-1653

[10] Influences of pH and Ligand Type on the Performance of Inorganic Aqueous Precursor-Derived ZnO Thin Film Transistors [J].

Jun, Taehwan ;

Jung, Yangho ;

Song, Keunkyu ;

Moon, Jooho .

ACS APPLIED MATERIALS & INTERFACES, 2011, 3 (03) :774-781

← 1 2 →