High quality ultrathin Bi2Se3 films on CaF2 and CaF2/Si by molecular beam epitaxy with a radio frequency cracker cell

被引：21

作者：

Zhang, Li ^{[1
,2
]}

Hammond, Robert ^{[2
]}

Dolev, Merav ^{[1
,2
]}

Liu, Min ^{[2
,3
]}

Palevski, Alexander ^{[4
]}

Kapitulnik, Aharon ^{[1
,2
,3
]}

机构：

[1] Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA

[2] Stanford Univ, Geballe Lab Adv Mat, Stanford, CA 94305 USA

[3] Stanford Univ, Dept Phys, Stanford, CA 94305 USA

[4] Tel Aviv Univ, Sch Phys & Astron, IL-69978 Tel Aviv, Israel

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 15期

关键词：

TOPOLOGICAL INSULATORS;

D O I：

10.1063/1.4758466

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a method to fabricate high quality Bi2Se3 thin films using molecular beam epitaxy with a radio frequency cracker cell as an atomic selenium source. With Se-to-Bi ratios close to exact stoichiometry, optimal layer-by-layer growth of high quality Bi2Se3 thin films with smooth surfaces has been achieved on CaF2(111) substrates and Si(111) substrates with a thin epitaxial CaF2 buffer layer (CaF2/Si). Transport measurements show a characteristic weak-antilocalization magnetoresistance in all the films, with the emergence of a weak-localization contribution in the ultrathin film limit. Quantum oscillations, attributed to the topological surface states have been observed, including in films grown on CaF2/Si. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4758466]

引用

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