Structural analysis of the c(4 x 2) reconstruction in Si(001) and Ge(001) surfaces by low-energy electron diffraction

被引：20
作者：
Shirasawa, T [1 ]
Mizuno, S [1 ]
Tochihara, H [1 ]
机构：
[1] Kyushu Univ, Dept Mol & Mat Sci, Kasuga, Fukuoka 8168580, Japan
来源：
SURFACE SCIENCE | 2006年 / 600卷 / 04期
关键词：
Si(001); Ge(001); low-energy electron diffraction (LEED); surface structure; morphology; roughness; topology;
D O I：
10.1016/j.susc.2005.11.031
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The c(4 x 2) structures in (001) surfaces of Si and Ge have been studied by low-energy electron diffraction (LEED). Using a proper cleaning method for the Si surface, we were able to observe clear c(4 x 2) LEED patterns up to incident energy of similar to 400 eV Lis well as the Ge surface. Extensive experimental intensity voltage curves allowed us to optimize the asymmetric dimer model up to the eighth layer (including the dimer layer) in depth in the dynamical LEED calculation. Optimized structural parameters are almost the same for the Si and Ge except for the height of the buckled-up atom of the asymmetric dimer. For the Ge surface, the structural parameters are in excellent agreement with those obtained by a previous theoretical calculation. The tilt angle and bond length of the dimer are 18 +/- 1 (19 +/- 1)degrees and 2.4 +/- 0.1 (2.5 +/- 0.1) angstrom for the Si(001) (Ge(001)), respectively. (c) 2005 Elsevier B.V. All rights reserved.
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页码：815 / 819
页数：5
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