Electronic properties of defects introduced during sputter deposition of Cr schottky contacts on GaAs

被引：0
|
作者：
Leclerc, Y [1 ]
Auret, FD [1 ]
Goodman, SA [1 ]
Myburg, G [1 ]
Schutte, C [1 ]
机构：
[1] UNIV PRETORIA,DEPT PHYS,ZA-0002 PRETORIA,SOUTH AFRICA
来源：
ION BEAM MODIFICATION OF MATERIALS | 1996年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：870 / 873
页数：4
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