Resistive switching properties and physical mechanism of cobalt ferrite thin films

被引：65
作者：
Hu, Wei [1 ]
Zou, Lilan [1 ]
Chen, Ruqi [1 ]
Xie, Wei [1 ]
Chen, Xinman [2 ]
Qin, Ni [1 ]
Li, Shuwei [1 ]
Yang, Guowei [1 ]
Bao, Dinghua [1 ]
机构：
[1] Sun Yat Sen Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
[2] S China Normal Univ, Inst Optoelect Mat & Technol, Guangzhou 510631, Guangdong, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 14期
关键词：
NONVOLATILE MEMORY DEVICE; NANOSTRUCTURES;
D O I：
10.1063/1.4870627
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report reproducible resistive switching performance and relevant physical mechanism of sandwiched Pt/CoFe2O4/Pt structures in which the CoFe2O4 thin films were fabricated by a chemical solution deposition method. Uniform switching voltages, good endurance, and long retention have been demonstrated in the Pt/CoFe2O4/Pt memory cells. On the basis of the analysis of current-voltage characteristic and its temperature dependence, we suggest that the carriers transport through the conducting filaments in low resistance state with Ohmic conduction behavior, and the Schottky emission and Poole-Frenkel emission dominate the conduction mechanism in high resistance state. From resistance-temperature dependence of resistance states, we believe that the physical origin of the resistive switching refers to the formation and rupture of the oxygen vacancies related filaments. The nanostructured CoFe2O4 thin films can find applications in resistive random access memory. (C) 2014 AIP Publishing LLC.
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页数：5
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