Picosecond buildup and relaxation of intense stimulated emission in GaAs

被引：13
|
作者：
Ageeva, N. N. [1 ]
Bronevoi, I. L. [1 ]
Zabegaev, D. N. [1 ]
Krivonosov, A. N. [1 ]
机构：
[1] Russian Acad Sci, Kotelnikov Inst Radio Engn & Elect, Moscow 125009, Russia
来源：
JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS | 2013年 / 116卷 / 04期
关键词：
GALLIUM-ARSENIDE; INTERBAND ABSORPTION; LIGHT-PULSES; THIN-LAYER; SUPERLUMINESCENCE; ENERGY; EXCITATION; DEPENDENCE; SATURATION; ELECTRONS;
D O I：
10.1134/S1063776113030011
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In support of the idea developed previously based on circumstantial evidence, we have found that stimulated emission emerges in GaAs and its intensity increases with a picosecond delay relative to the front of powerful picosecond optical pumping that produced a dense electron-hole plasma. The emission intensity relaxes with decreasing pumping with a characteristic time of similar to 10 ps. We have derived the dependences of the delay time, the relaxation time, and the duration of the picosecond emission pulse on its photon energy. The estimates based on the fact that the relaxation of emission is determined by electron-hole plasma cooling correspond to the measured relaxation time.
引用
收藏
页码：551 / 557
页数：7
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