The conduction band absorption spectrum of interdiffused InGaAs/GaAs quantum dot infrared photodetectors

被引：14

作者：

Jolley, G. ^{[1
]}

McKerracher, I. ^{[2
]}

Fu, L. ^{[2
]}

Tan, H. H. ^{[2
]}

Jagadish, C. ^{[2
]}

机构：

[1] Univ Western Australia, Sch Elect Elect & Comp Engn, Perth, WA 6009, Australia

[2] Australian Natl Univ, Res Sch Phys & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 12期

基金：

澳大利亚研究理事会;

关键词：

INAS; LUMINESCENCE; RESPONSIVITY; ENERGIES; STRAIN; DEVICE; GAAS;

D O I：

10.1063/1.4729833

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a theoretical study of the relationship between interdiffusion and the conduction band optical absorption of In(Ga)As/GaAs quantum dots. Quantum dot geometries are progressively interdiffused based on Fick's model and the quantum dot strain, band structure and optical absorption cross-section are calculated numerically. Quantifying the effects of interdiffusion on quantum dot optical absorption is important for applications that utilize post-growth techniques such as selective area intermixing. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729833]

引用

页数：8

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