Carbon nanometer films prepared by plasma-based ion implantation on single crystalline Si wafer

被引：12

作者：

Liao, JX ^{[1
]}

Liu, WM ^{[1
]}

Xu, T ^{[1
]}

Xue, QJ ^{[1
]}

机构：

[1] Chinese Acad Sci, Languor Inst Chem Phys, State Key Lab Solid Lubricat, Languor 730000, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2004年 / 226卷 / 04期

基金：

中国国家自然科学基金;

关键词：

carbon films; DLC; plasma ion implantation;

D O I：

10.1016/j.apsusc.2003.10.039

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Four carbon nanometer films ranging from 5 to 60 nm have been prepared by plasma-based ion implantation (PBII) with C on Si (10 0) wafers. Raman spectra and X-ray photoelectron spectroscopy (XPS) indicate these films are diamond-like carbon (DLC) films with high sp(3)/sp(2) bonds ratio. Atomic force microscopy shows that their appearances are smooth and compact, and improved to some extent. Meanwhile, XPS displays that they are naturally connected with the Si substrate by a C-Si transition layer where the implanted C+ ions react with Si to form SiCx. Infrared spectra reveal they contain some hydrogen, and hydrogen mainly combines with carbon to form sp(3) C-H, C-H-2 and C-H-3 bonds. Proper DLC films will be obtained and used as the qualified candidates in some particular engineering applications by actively optimizing PBII parameters. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：387 / 392

页数：6

共 23 条

[1] PLASMA SOURCE ION-IMPLANTATION TECHNIQUE FOR SURFACE MODIFICATION OF MATERIALS [J].