The donor nature of muonium in undoped, heavily n-type and p-type InAs

被引：4

作者：

King, P. D. C. ^{[1
]}

Veal, T. D. ^{[1
]}

McConville, C. F. ^{[1
]}

King, P. J. C. ^{[2
]}

Cox, S. F. J. ^{[2
]}

Celebi, Y. G. ^{[3
]}

Lichti, R. L. ^{[4
]}

机构：

[1] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

[2] Rutherford Appleton Lab, ISIS Facil, Chilton OX11 0QX, Oxon, England

[3] Univ Istanbul, Dept Phys, TR-34459 Istanbul, Turkey

[4] Texas Tech Univ, Dept Phys, Lubbock, TX 79409 USA

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2009年 / 21卷 / 07期

基金：

英国科学技术设施理事会; 美国国家科学基金会; 英国工程与自然科学研究理事会;

关键词：

ZINC-OXIDE; GAP STATES; HYDROGEN; SEMICONDUCTORS; DIFFUSION; CONTINUUM; LEVEL;

D O I：

10.1088/0953-8984/21/7/075803

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The charge state of muonium has been investigated in p-type doped, nominally undoped (low n-type) and heavily n-type doped InAs. The donor Mu(+) state is shown to be the dominant defect in all cases. Consequently, muonium does not simply counteract the prevailing conductivity in this material. This is consistent with the charge neutrality level lying above the conduction band minimum in InAs.

引用

页数：4

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