Electronic and optical properties of CdS films deposited by evaporation

被引：35

作者：

Huang, L. ^{[1
]}

Wei, Z. L. ^{[1
]}

Zhang, F. M. ^{[1
]}

Wu, X. S. ^{[1
]}

机构：

[1] Nanjing Univ, Sch Phys, Ctr Photo Voltage Engn, Nanjing 210093, Jiangsu, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2015年 / 648卷

关键词：

CdS film; Thermal evaporation; Growth temperature and atmosphere; Electronic and optical properties; CDS/CDTE SOLAR-CELLS; EFFICIENCY;

D O I：

10.1016/j.jallcom.2015.07.041

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

CdS films grown by thermal evaporation on glass substrate under ultra-high vacuum are prepared with varying the growth temperature and atmosphere environment. The minimum resistivity of the films is as low as 2.0 Omega.cm, and the carrier density even reaches 1.6 x 10(18) cm(-3), which is much less than that prepared by the chemical bath deposition (CBD) method. The transmittance and band gap increase with the set the argon atmosphere and the growth temperature in the optimum value. Our results indicate the CdS films grown by evaporation at high vacuum may be more suitable for the application in optoelectronic devices, such as the solar cell materials. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：591 / 594

页数：4

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