Structure property relationships in gallium oxide thin films grown by pulsed laser deposition

被引：23

作者：

Garten, Lauren M. ^{[1
]}

Zakutayev, Andriy ^{[1
]}

Perkins, John D. ^{[1
]}

Gorman, Brian P. ^{[2
]}

Ndione, Paul F. ^{[1
]}

Ginley, David S. ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

[2] Colorado Sch Mines, Golden, CO 80401 USA

来源：

MRS COMMUNICATIONS | 2016年 / 6卷 / 04期

关键词：

Partial pressure - Sapphire - Electronic properties - Temperature distribution - Gallium compounds - Semiconductor doping - Oxide films - Thin films - Pulsed lasers - Single crystals - Oxygen;

D O I：

10.1557/mrc.2016.50

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Beta-gallium oxide (beta-Ga2O3) is of increasing interest to the optoelectronic community for transparent conductor and power electronic applications. Considerable variability exists in the literature on the growth and doping of Ga2O3 films, especially as a function of growth approach, temperature, and oxygen partial pressure. Here pulsed laser deposition (PLD) was used to grow high-quality beta-Ga2O3 films on (0001) sapphire and (-201) Ga2O3 single crystals and to explore the growth, stability, and dopability of these films as function of temperature and oxygen partial pressure. There is a strong temperature dependence to the phase formation, morphology, and electronic properties of beta-Ga2O3 from 350 to 550 degrees C.

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收藏

页码：348 / 353

页数：6

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