Study of the spectral and power characteristics of superluminescent diodes

被引:13
作者
Zhuravleva, OV [1 ]
Kurnosov, VD [1 ]
Kurnosov, KV [1 ]
Lobintsov, AV [1 ]
Romantsevich, VI [1 ]
Simakov, VA [1 ]
Chernov, RV [1 ]
机构
[1] MF Stelmakh Polyus Res & Dev Inst, Moscow 117342, Russia
关键词
superluminescent diode; models with and without the k-selection rule;
D O I
10.1070/QE2004v034n01ABEH002572
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The spectral and power characteristics of superluminescent diodes are studied using a model of radiative transitions in which the wave-vector selection rule is either satisfied or not satisfied. The best agreement between theoretical and experimental characteristics of the diodes is obtained for the model without the k-selection rule.
引用
收藏
页码:15 / 19
页数:5
相关论文
共 16 条
  • [1] Radiative recombination rate in quantum-well structures in the model without k-selection
    Afonenko, AA
    Manak, IS
    Shevtsov, VA
    Kononenko, VK
    [J]. SEMICONDUCTORS, 1997, 31 (09) : 929 - 932
  • [2] Agrawal G, 1986, LONG WAVELENGTH SEMI
  • [3] HIGH-POWER SUPERLUMINESCENT DIODES
    ALPHONSE, GA
    GILBERT, DB
    HARVEY, MG
    ETTENBERG, M
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (12) : 2454 - 2457
  • [4] Batovrin V. K., 1996, Quantum Electronics, V26, P109, DOI 10.1070/QE1996v026n02ABEH000603
  • [5] BOECK J, 1979, FREQUENZ, V33, P278, DOI 10.1515/FREQ.1979.33.10.278
  • [6] Casey H., 1981, HETEROSTRUCTURE LASE
  • [7] PECULIAR FEATURES OF INGAASP DH SUPERLUMINESCENT DIODES
    JOINDOT, IM
    BOISROBERT, CY
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (07) : 1659 - 1665
  • [8] KONONENKO VK, 1997, ZH PRIKL SPEKTROSK, V64, P221
  • [9] Kurbatov L. N., 1970, Fizika i Tekhnika Poluprovodnikov, V4, P2025
  • [10] Lash G., 1964, PHYS REV A, V133, P553