Annealing and recrystallization of amorphous silicon carbide produced by ion implantation

被引：19

作者：

Höfgen, A ^{[1
]}

Heera, V ^{[1
]}

Eichhorn, F ^{[1
]}

Skorupa, W ^{[1
]}

Möller, W ^{[1
]}

机构：

[1] Rossendorf Inc, Forschungszentrum, D-01314 Dresden, Germany

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 61-2卷

关键词：

amorphization; 6H-SiC; ion implantation; recrystallization;

D O I：

10.1016/S0921-5107(98)00533-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The annealing behavior of amorphous SIC layers produced by MeV Si-implantation into GH-SIC has been investigated systematically by means of step height measurements and X-ray diffraction analysis. Two annealing stages are found. Each of them causes a specific densification of the amorphous layer. At temperatures below 700 degrees C defect annealing processes are responsible for densification. Amorphous states with continuously varying densities can be produced in this first stage of annealing. Annealing at temperatures above 700 degrees C is characterized by a combination of defect annealing and recrystallization. It is shown that the crystallization mode changes with increasing temperature from nucleated growth at 800 degrees C to epitaxial regrowth at 1000 degrees C. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：353 / 357

页数：5

共 19 条

[1] An EPR study of defects induced in 6H-SiC by ion implantation [J].

Barklie, RC ;

Collins, M ;

Holm, B ;

Pacaud, Y ;

Skorupa, W .

JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (03) :137-143

[2]

Bohn H. G., 1987, Journal of Materials Research, V2, P107, DOI 10.1557/JMR.1987.0107

[3] Defect annealing in ion implanted silicon carbide [J].

Calcagno, L ;

Grimaldi, MG ;

Musumeci, P .

JOURNAL OF MATERIALS RESEARCH, 1997, 12 (07) :1727-1733

[4]

Christian JW, 1975, THEORY TRANSFORMATIO

[5] THIN-FILM DEPOSITION AND MICROELECTRONIC AND OPTOELECTRONIC DEVICE FABRICATION AND CHARACTERIZATION IN MONOCRYSTALLINE ALPHA AND BETA SILICON-CARBIDE [J].

DAVIS, RF ;

KELNER, G ;

SHUR, M ;

PALMOUR, JW ;

EDMOND, JA .

PROCEEDINGS OF THE IEEE, 1991, 79 (05) :677-701

[6]

Glaser E, 1996, INST PHYS CONF SER, V142, P557

[7] Recrystallization of MeV Si implanted 6H-SiC [J].

Harada, S ;

Ishimaru, M ;

Motooka, T ;

Nakata, T ;

Yoneda, T ;

Inoue, M .

APPLIED PHYSICS LETTERS, 1996, 69 (23) :3534-3536

[8] Density and structural changes in SiC after amorphization and annealing [J].

Heera, V ;

Prokert, F ;

Schell, N ;

Seifarth, H ;

Fukarek, W ;

Voelskow, M ;

Skorupa, W .

APPLIED PHYSICS LETTERS, 1997, 70 (26) :3531-3533

[9] Ion implantation and annealing effects in silicon carbide [J].

Heera, V ;

Skorupa, W .

MATERIALS MODIFICATION AND SYNTHESIS BY ION BEAM PROCESSING, 1997, 438 :241-252

[10]

HEERA V, 1999, APPL PHYS LETT, V67, P1995

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