A ku band four-stage PHEMT 1W MMIC power amplifier

被引：3
|
作者：
Huang, CW
Chang, SJ [1 ]
Wu, W
Wu, CL
Chang, CS
机构：
[1] Natl Cheng Kung Univ, Inst Microelect, Tainan, Taiwan
[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan
[3] Transcom Inc, Tainan, Taiwan
来源：
MICROELECTRONICS JOURNAL | 2006年 / 37卷 / 05期
关键词：
Ku band; MMIC; GaAs; four stages; power amplifier;
D O I：
10.1016/j.mejo.2005.07.004
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A successful development of a very high performance and reliable power PHEMT MMIC technology is reported. In this paper, a Ku-Band 1 W AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier for VSAT ODU application is demonstrated. This four-stage amplifier is designed to fully match for a 50 Q input and output impedance. With 7 V and 700 mA DC bias condition, the amplifier has achieved 30 dB small-signal gain, 30.8 dBm 1-dB gain compression power with 24.5% power-added efficiency (PAE) and 31.3 dBm saturation power with 27.5% PAE from 14 to 17 GHz. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码：428 / 432
页数：5
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