Electrothermal analysis of AlGaN/GaN high electron mobility transistors

被引：34

作者：

Sridharan, Sriraaman ^{[1
]}

Venkatachalam, Anusha ^{[1
]}

Yoder, P. D. ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Savannah, GA 31407 USA

来源：

JOURNAL OF COMPUTATIONAL ELECTRONICS | 2008年 / 7卷 / 03期

关键词：

Gallium nitride; HEMT; Electrothermal transport; Phonon population;

D O I：

10.1007/s10825-008-0210-x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Efficiency of AlGaN/GaN HEMTs used in high power, high frequency applications is thought to be limited by parasitic thermal effects. In this study, we investigate coupled electrical and thermal transport in AlGaN/GaN HEMTs using an ensemble Monte Carlo model. Calculation of the non-equilibrium phonon population reveals a hot spot in the channel that is localized at low drain-source bias, but expands towards the drain at higher bias, significantly degrading channel mobility.

引用

页码：236 / 239

页数：4

共 6 条

[1] Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures [J].

Ambacher, O ;

Smart, J ;

Shealy, JR ;

Weimann, NG ;

Chu, K ;

Murphy, M ;

Schaff, WJ ;

Eastman, LF ;

Dimitrov, R ;

Wittmer, L ;

Stutzmann, M ;

Rieger, W ;

Hilsenbeck, J .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (06) :3222-3233

[2] 12 W/mm AlGaN-GaNHFETs on silicon substrates [J].

Johnson, JW ;

Piner, EL ;

Therrien, R ;

Rajagopal, P ;

Roberts, JC ;

Brown, JD ;

Singhal, S ;

Linthicum, KJ .

IEEE ELECTRON DEVICE LETTERS, 2004, 25 (07) :459-461

[3]

Matulionis A., 2004, P 2004 DEV RES C NOT, P146

[4] High-power AlGaN/GaN HEMTs for Ka-band applications [J].

Palacios, T ;

Chakraborty, A ;

Rajan, S ;

Poblenz, C ;

Keller, S ;

DenBaars, SP ;

Speck, JS ;

Mishra, UK .

IEEE ELECTRON DEVICE LETTERS, 2005, 26 (11) :781-783

[5]

Pop E, 2003, 2003 IEEE INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, P121

[6] High breakdown voltage AlGaN-GaN Power-HEMT design and high current density switching behavior [J].

Saito, W ;

Takada, Y ;

Kuraguchi, M ;

Tsuda, K ;

Omura, I ;

Ogura, T ;

Ohashi, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (12) :2528-2531

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