Role of low-temperature AlGaN interlayers in thick GaN on silicon by metalorganic vapor phase epitaxy

被引：37

作者：

Fritze, S. ^{[1
]}

Drechsel, P. ^{[2
]}

Stauss, P. ^{[2
]}

Rode, P. ^{[2
]}

Markurt, T. ^{[3
]}

Schulz, T. ^{[3
]}

Albrecht, M. ^{[3
]}

Blaesing, J. ^{[1
]}

Dadgar, A. ^{[1
]}

Krost, A. ^{[1
]}

机构：

[1] Univ Magdeburg, Inst Expt Phys, D-39106 Magdeburg, Germany

[2] Osram Opto Semicond, D-93055 Regensburg, Germany

[3] Leibniz Inst Kristallzuchtung, D-12489 Berlin, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 12期

关键词：

X-RAY-DIFFRACTION; ALN INTERLAYERS; SI(111) SUBSTRATE; DEFECT STRUCTURE; STRESS; GROWTH; REDUCTION; FILMS; SI; STRAIN;

D O I：

10.1063/1.4729044

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin AlGaN interlayers have been grown into a thick GaN stack on Si substrates to compensate tensile thermal stress and significantly improve the structural perfection of the GaN. In particular, thicker interlayers reduce the density in a-type dislocations as concluded from x-ray diffraction (XRD) measurements. Beyond an interlayer thickness of 28 nm plastic substrate deformation occurs. For a thick GaN stack, the first two interlayers serve as strain engineering layers to obtain a crack-free GaN structure, while a third strongly reduces the XRD x-(0002)-FWHM. The vertical strain and quality profile determined by several XRD methods demonstrates the individual impact of each interlayer. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729044]

引用

页数：6

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