Experimental evidence of "latent gate oxide damages" in medium voltage power MOSFET as a result of heavy ions exposure

被引：6

作者：

Busatto, G. ^{[1
]}

Curro, G. ^{[2
]}

Iannuzzo, F. ^{[1
]}

Porzio, A. ^{[1
]}

Sanseverino, A. ^{[1
]}

Velardi, F. ^{[1
]}

机构：

[1] Univ Cassino, Dept Automat Electromagnetism Informat Engn & Ind, I-03043 Cassino, Italy

[2] ST Microelect, I-95100 Catania, Italy

来源：

MICROELECTRONICS RELIABILITY | 2008年 / 48卷 / 8-9期

关键词：

D O I：

10.1016/j.microrel.2008.07.030

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The results presented in this paper are related to an experimental study that has the aim to evidence the formation of "latent gate oxide damages" in medium voltage power MOSFETs during the impact with energetic particles. The understanding of these "latent defectiveness" can be an helpful aid in the comprehension of the mechanisms of breach of the oxide layer of MOS structures induced by single energetic particles impact (single event gate rupture). To properly detect the presence of-latent damages" we have developed a high resolution experimental set-up and identified ail appropriate region in which the device have to be biased in order to trigger this kind of damage. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：1306 / 1309

页数：4

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