Low-Temperature Front-Side BEOL Technology with Circuit Level Multiline Thru-Reflect-Line Kit for III-V MOSFETs on Silicon

被引：6

作者：

Andric, Stefan ^{[1
]}

Ohlsson, Lars ^{[1
]}

Wernersson, Lars-Erik ^{[1
]}

机构：

[1] Lund Univ, Dept Elect & Informat Technol, SE-22100 Lund, Sweden

来源：

2019 92ND ARFTG MICROWAVE MEASUREMENT CONFERENCE (ARFTG) | 2019年

基金：

欧盟地平线“2020”;

关键词：

Back-End-Of-Line (BEOL); Benz ocyclobutene (BCB); Microstrip Transmission Line; Nanowire MOSFET; On wafer Calibration; Thru-Reflect-Line (TRL);

D O I：

10.1109/arftg.2019.8637222

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A multiline Thru-Reflect-Line (mTRL) calibration and parasitic pad removal kit is presented, intended for mm-wave III-V nanowire MOSFET characterization. Multiline TRL is implemented in a low-temperature BEOL process with substrate decoupled microstrip transmission lines. The transmission line characteristic impedance needed for accurate mTRL calibration is modelled. Simulated transmission line parameters show a good fit with measured transmission line data, including line characteristic impedance variation. Line loss less than 0.5 dB/mm up to 50 GHz is obtained. Finally, interconnect via section is calibrated and modelled, showing mTRL's ability to obtain small parasitic parameters.

引用

页数：4

共 12 条

[1] Multiline TRL revealed [J].

DeGroot, DC ;

Jargon, JA ;

Marks, RB .

ARFTG: AUTOMATIC RF TECHNIQUES GROUP, CONFERENCE DIGEST, FALL 2002: MEASUREMENTS NEEDS FOR EMERGING TECHNOLOGIES, 2002, :131-155

[2] THRU-REFLECT-LINE - IMPROVED TECHNIQUE FOR CALIBRATING THE DUAL 6-PORT AUTOMATIC NETWORK ANALYZER [J].

ENGEN, GF ;

HOER, CA .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1979, 27 (12) :987-993

[3] High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates [J].

Johansson, Sofia ;

Memisevic, Elvedin ;

Wernersson, Lars-Erik ;

Lind, Erik .

IEEE ELECTRON DEVICE LETTERS, 2014, 35 (05) :518-520

[4]

KOOLEN MCAM, 1991, PROCEEDINGS OF THE 1991 BIPOLAR CIRCUITS AND TECHNOLOGY MEETING, P188, DOI 10.1109/BIPOL.1991.160985

[5] A MULTILINE METHOD OF NETWORK ANALYZER CALIBRATION [J].

MARKS, RB .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1991, 39 (07) :1205-1215

[6] Backside Process Free Broadband Amplifier MMICs at D-Band and H-Band in 20 nm mHEMT Technology [J].

Merkle, Thomas ;

Leuther, Arnulf ;

Koch, Stefan ;

Kallfass, Ingmar ;

Tessmann, Axel ;

Wagner, Sandrine ;

Massler, Hermann ;

Schlechtweg, Michael ;

Ambacher, Oliver .

2014 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS): INTEGRATED CIRCUITS IN GAAS, INP, SIGE, GAN AND OTHER COMPOUND SEMICONDUCTORS, 2014,

[7]

Rosa E. B., 1908, Bull. Bur. Standards, V4, P301, DOI DOI 10.6028/BULLETIN.088

[8] Characterization of low permittivity (low-k) polymeric dielectric films for low temperature device integration [J].

Sivoththaman, S ;

Jeyakumar, R ;

Ren, L ;

Nathan, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2002, 20 (03) :1149-1153

[9] InP HBT Technologies for THz Integrated Circuits [J].

Urteaga, Miguel ;

Griffith, Zach ;

Seo, Munkyo ;

Hacker, Jonathan ;

Rodwell, Mark J. W. .

PROCEEDINGS OF THE IEEE, 2017, 105 (06) :1051-1067

[10] Calibrations for Millimeter-Wave Silicon Transistor Characterization [J].

Williams, Dylan F. ;

Corson, Phillip ;

Sharma, Jahnavi ;

Krishnaswamy, Harish ;

Tai, Wei ;

George, Zacharias ;

Ricketts, David S. ;

Watson, Paul M. ;

Dacquay, Eric ;

Voinigescu, Sorin P. .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2014, 62 (03) :658-668

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