Carbon-doped Ge2Sb2Te5 phase change material: A candidate for high-density phase change memory application

被引：131
作者：
Zhou, Xilin [1 ,2 ,3 ]
Wu, Liangcai [1 ,2 ]
Song, Zhitang [1 ,2 ]
Rao, Feng [1 ,2 ]
Zhu, Min [1 ,2 ,3 ]
Peng, Cheng [1 ,2 ]
Yao, Dongning [1 ,2 ]
Song, Sannian [1 ,2 ]
Liu, Bo [1 ,2 ]
Feng, Songlin [1 ,2 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Nanotechnol Lab, Shanghai 200050, Peoples R China
[3] Chinese Acad Sci, Grad Univ, Beijing 100080, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 14期
基金：
中国国家自然科学基金;
关键词：
RESISTANCE MEASUREMENTS; TRANSITION;
D O I：
10.1063/1.4757137
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Carbon-doped Ge2Sb2Te5 material is proposed for high-density phase-change memories. The carbon doping effects on electrical and structural properties of Ge2Sb2Te5 are studied by in situ resistance and x-ray diffraction measurements as well as optical spectroscopy. C atoms are found to significantly enhance the thermal stability of amorphous Ge2Sb2Te5 by increasing the degree of disorder of the amorphous phase. The reversible electrical switching capability of the phase-change memory cells is improved in terms of power consumption with carbon addition. The endurance of similar to 2.1 x 10(4) cycles suggests that C-doped Ge2Sb2Te5 film will be a potential phase-change material for high-density storage application. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4757137]
引用
收藏
页数：4
相关论文
共 19 条
  • [11] Atomic Layer Deposition of Metal Tellurides and Selenides Using Alkylsilyl Compounds of Tellurium and Selenium
    Pore, Viljami
    Hatanpaa, Timo
    Ritala, Mikko
    Leskela, Markku
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2009, 131 (10) : 3478 - +
  • [12] Amorphous-to-crystal transition of nitrogen- and oxygen-doped Ge2Sb2Te5 films studied by in situ resistance measurements
    Privitera, S
    Rimini, E
    Zonca, R
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (15) : 3044 - 3046
  • [13] Investigation of changes in band gap and density of localized states on phase transition for Ge2Sb2Te5 and Si3.5Sb2Te3 materials
    Rao, Feng
    Song, Zhitang
    Cheng, Yan
    Xia, Mengjiao
    Ren, Kun
    Wu, Liangcai
    Liu, Bo
    Feng, Songlin
    [J]. ACTA MATERIALIA, 2012, 60 (01) : 323 - 328
  • [14] Phase change memory cell using tungsten trioxide bottom heating layer
    Rao, Feng
    Song, Zhitang
    Gong, Yuefeng
    Wu, Liangcai
    Liu, Bo
    Feng, Songlin
    Chen, Bomy
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (22)
  • [15] Siegrist T, 2011, NAT MATER, V10, P202, DOI [10.1038/nmat2934, 10.1038/NMAT2934]
  • [16] Chalcogenide thin-film transistors using oxygenated n-type and p-type phase change materials
    Song, Ki-Bong
    Sohn, Sung-Won
    Kim, JunHo
    Kim, Kyung-Am
    Cho, Kyuman
    [J]. APPLIED PHYSICS LETTERS, 2008, 93 (04)
  • [17] Phase change behaviors of Sn-doped Ge-Sb-Te material
    Song, W. D.
    Shi, L. P.
    Miao, X. S.
    Chong, T. C.
    [J]. APPLIED PHYSICS LETTERS, 2007, 90 (09)
  • [18] MOCVD Ge3Sb2Te5 for PCM Applications
    Zheng, J. F.
    Reed, J.
    Schell, C.
    Czubatyj, W.
    Sandoval, R.
    Fournier, J.
    Li, W.
    Hunks, W.
    Dennison, C.
    Hudgens, S.
    Lowrey, T.
    [J]. IEEE ELECTRON DEVICE LETTERS, 2010, 31 (09) : 999 - 1001
  • [19] Effect of dopants on the structure and properties of Ge2Sb2Te5 studied by Ab initio calculations
    Zhou, Jian
    Sun, Zhimei
    Xu, Lihua
    Ahuja, Rajeev
    [J]. SOLID STATE COMMUNICATIONS, 2008, 148 (3-4) : 113 - 116
12