Carbon-doped Ge2Sb2Te5 phase change material: A candidate for high-density phase change memory application

被引：131

作者：

Zhou, Xilin ^{[1
,2
,3
]}

Wu, Liangcai ^{[1
,2
]}

Song, Zhitang ^{[1
,2
]}

Rao, Feng ^{[1
,2
]}

Zhu, Min ^{[1
,2
,3
]}

Peng, Cheng ^{[1
,2
]}

Yao, Dongning ^{[1
,2
]}

Song, Sannian ^{[1
,2
]}

Liu, Bo ^{[1
,2
]}

Feng, Songlin ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Nanotechnol Lab, Shanghai 200050, Peoples R China

[3] Chinese Acad Sci, Grad Univ, Beijing 100080, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 14期

基金：

中国国家自然科学基金;

关键词：

RESISTANCE MEASUREMENTS; TRANSITION;

D O I：

10.1063/1.4757137

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carbon-doped Ge2Sb2Te5 material is proposed for high-density phase-change memories. The carbon doping effects on electrical and structural properties of Ge2Sb2Te5 are studied by in situ resistance and x-ray diffraction measurements as well as optical spectroscopy. C atoms are found to significantly enhance the thermal stability of amorphous Ge2Sb2Te5 by increasing the degree of disorder of the amorphous phase. The reversible electrical switching capability of the phase-change memory cells is improved in terms of power consumption with carbon addition. The endurance of similar to 2.1 x 10(4) cycles suggests that C-doped Ge2Sb2Te5 film will be a potential phase-change material for high-density storage application. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4757137]

引用

页数：4

共 19 条

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