ALD ZnSnO buffer layer for enhancing heterojunction interface quality of CZTS solar cells

被引:0
作者
Cui, Xin [1 ]
Sun, Kaiwen [1 ]
Lee, Chang-Yeh [1 ]
Yan, Chang [1 ]
Sun, Heng [1 ]
Zhang, Yuanfang [1 ]
Liu, Fangyang [1 ]
Green, Martin [1 ]
Hoex, Bram [1 ]
Hao, Xiaojing [1 ]
机构
[1] UNSW Sydney, Sch Photovolta & Renewable Energy Engn, Sydney, NSW 2052, Australia
来源
2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) | 2018年
关键词
ALD; ZnSnO; heterojunction; CZTS;
D O I
暂无
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
Kesterite Cu2ZnSnS4 (CZTS) solar cells have emerged as a promising candidate for scalable thin-film solar cells development, mainly due to its outstanding performance and compatibility with CuInGaSe2 and CdTe solar cells while only consisting of earth-abundant and non-toxic constituents. Here we present a method to address the relative low V-OC of CZTS solar cells by applying atomic layer deposited Zn1-xSnxO (ZTO) as a Cd-free buffer layer. X-ray photoelectron spectroscopy measurement is implemented to study the band alignment at the CZTS/ZTO hetero-interface. It shows that the favorable conduction band alignment of CZTS/ZTO resulted in increasing V-OC by up to 10 %. By optimizing the treatment of CZTS absorber before ZTO deposition, we finally obtained an efficiency of 9.3 % which is the highest efficiency so far reported for Cd-free pure sulphide CZTS solar cells to the best of our knowledge.
引用
收藏
页码:1511 / 1513
页数:3
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