Exciton diffusion in WSe2 monolayers embedded in a van der Waals heterostructure

被引:126
作者
Cadiz, F. [1 ]
Robert, C. [2 ]
Courtade, E. [2 ]
Manca, M. [2 ]
Martinelli, L. [1 ]
Taniguchi, T. [3 ]
Watanabe, K. [3 ]
Amand, T. [2 ]
Rowe, A. C. H. [1 ]
Paget, D. [1 ]
Urbaszek, B. [2 ]
Marie, X. [2 ]
机构
[1] Univ Paris Saclay, CNRS, Ecole Polytech, Phys Matiere Condensee, F-91128 Palaiseau, France
[2] Univ Toulouse, INSA CNRS UPS, LPCNO, 135 Av Rangueil, F-31077 Toulouse, France
[3] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan
基金
欧洲研究理事会;
关键词
MOS2; MICROSCOPY; LAYER;
D O I
10.1063/1.5026478
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have combined spatially resolved steady-state micro-photoluminescence with time-resolved photoluminescence to investigate the exciton diffusion in a WSe2 monolayer encapsulated with hexagonal boron nitride. At 300 K, we extract an exciton diffusion length of L-X = 0.36 +/- 0.02 mu m and an exciton diffusion coefficient of D-X 14.5 +/- 2 cm(2)/s. This represents a nearly 10-fold increase in the effective mobility of excitons with respect to several previously reported values on nonencapsulated samples. At cryogenic temperatures, the high optical quality of these samples has allowed us to discriminate the diffusion of the different exciton species: bright and dark neutral excitons, as well as charged excitons. The longer lifetime of dark neutral excitons yields a larger diffusion length of L-XD = 1.5 +/- 0.02 mu m. Published by AIP Publishing.
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页数:4
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