Perpendicularly magnetized τ-MnAl (001) thin films epitaxied on GaAs

被引:63
作者
Nie, S. H. [1 ]
Zhu, L. J. [1 ]
Lu, J. [1 ]
Pan, D. [1 ]
Wang, H. L. [1 ]
Yu, X. Z. [1 ]
Xiao, J. X. [1 ]
Zhao, J. H. [1 ]
机构
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
关键词
MAGNETOCRYSTALLINE ANISOTROPY; TEMPERATURE; ENERGY;
D O I
10.1063/1.4801932
中图分类号
O59 [应用物理学];
学科分类号
摘要
Perpendicularly magnetized s-MnAl films have been epitaxied on GaAs (001) by molecular-beam epitaxy. Crystalline quality and magnetic properties of the samples were strongly dependent on growth temperature. The highest coercivity of 10.7 kOe, saturation magnetization of 361.4 emu/cm(3), perpendicular magnetic anisotropy constant of 13.65 Merg/cm(3), and magnetic energy product of 4.44 MGOe were achieved. These tunable magnetic properties make MnAl films valuable as excellent and cost-effective alternative for not only high density perpendicular magnetic recording storage and spintronics devices but also permanent magnets. (C) 2013 AIP Publishing LLC [http://dx.doi.org/10.1063/1.4801932]
引用
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页数:4
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