Self-Consistent Determination of Threshold Voltage of In-rich Gate-All-Around InxGa1-xAs Nanowire Transistor Incorporating Quantum Mechanical Effect

被引：0

作者：

Zaman, Rifat ^{[1
]}

Khan, Saeed Uz Zaman ^{[1
]}

Hossain, Md. Shafayat ^{[1
]}

Rahman, Fahim Ur ^{[1
]}

Hossen, Md. Obaidul ^{[1
]}

Khosru, Quazi D. M. ^{[1
]}

机构：

[1] Bangladesh Univ Engn & Technol, Dept Elect & Elect Engn, Dhaka 1000, Bangladesh

来源：

2012 7TH INTERNATIONAL CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING (ICECE) | 2012年

关键词：

III-V GAA MOSFET; Threshold Modeling; Channel Width Variation; Oxide Thickness Variation; Self-Consistent Poisson- Schrodinger Solver; MOSFETS; EXTRACTION;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper presents quantum definition based threshold voltage calculation of Gate-All-Around InGaAs nanowire transistor. Though similar determination was previously established for TG FinFETs in recent literature, application of this method on Gate-All-Around Nanowire Transistor is yet to be done. A self-consistent solver, which takes wave function penetration and other quantum mechanical effects into account, has been used here to establish the capacitance-voltage characteristics that have been used for threshold voltage calculation. Using the extracted threshold voltages, effect of channel width and channel material composition variation on threshold has been studied and a modification of classical analytical formula is proposed based on a fitting parameter.

引用

页数：4

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