Emission properties of InGaAs/GaAs heterostructures with δ⟨Mn⟩-doped barrier

被引：37

作者：

Dorokhin, M. V. ^{[1
]}

Danilov, Yu A. ^{[1
]}

Demina, P. B. ^{[1
]}

Kulakovskii, V. D. ^{[2
]}

Vikhrova, O. V. ^{[1
]}

Zaitsev, S. V. ^{[2
]}

Zvonkov, B. N. ^{[1
]}

机构：

[1] NI Lobachevskii State Univ, Physicotech Res Inst, Nizhnii Novgorod 603950, Russia

[2] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Russia

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2008年 / 41卷 / 24期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1088/0022-3727/41/24/245110

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Light-emitting device heterostructures with a delta < Mn >-doped layer inserted between the Schottky contact and near-surface InGaAs/GaAs quantum well (QW) have been fabricated. The delta < Mn >-doped layer facilitates hole tunnelling from the Schottky contact to the QW and impedes that of QW electrons in the opposite direction. It leads to a highly enhanced electroluminescence signal from the InGaAs QW. An effective p-d exchange interaction of holes with magnetic moments of Mn ions is found to strongly enhance the effective hole g-factor and the circular polarization of the low (similar to 2K) temperature emission up to 20% in magnetic fields of 1-2T.

引用

页数：5

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