Improved latch-up immunity in junction-isolated smart power ICs with unbiased guard ring

被引：18

作者：

Gupta, S ^{[1
]}

Beckman, JC ^{[1
]}

Kosier, SL ^{[1
]}

机构：

[1] PolarFab, Bloomington, MN 55425 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 12期

关键词：

crosstalk; crosstalk isolation; current carrying capability; high voltage LDMOS; isolation technology; latch-up; latch-up immunity; low-voltage CMOS control circuit; power IC technology;

D O I：

10.1109/55.974591

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performance of the unbiased guard ring structure is measured and the effects of high current, emitter area, and layout of unbiased guard rings are reported and explained. Measurements show a reduction in parasitic gain by up to six orders of magnitude, while also avoiding the cross talk and power consumption of biased rings. A comparative analysis of unbiased guard ring with biased guard ring shows up to 100 times better performance at low current levels. A modification to the unbiased guard ring is also implemented and successfully tested which shows an increase in the current handling capability of the structure by an order of magnitude.

引用

页码：600 / 602

页数：3

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