Structural and electrical properties of transparent conducting Al2O3-doped ZnO thin films using off-axis DC magnetron sputtering

被引：18

作者：

Lee, Sunghwan ^{[1
]}

Kim, Seung-Hyun ^{[1
]}

Kim, Youngha ^{[2
]}

Kingon, Angus I. ^{[1
]}

Paine, David C. ^{[1
]}

No, Kwangsoo ^{[2
]}

机构：

[1] Brown Univ, Sch Engn, Providence, RI 02912 USA

[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

来源：

MATERIALS LETTERS | 2012年 / 85卷

基金：

美国国家科学基金会;

关键词：

Al2O3-doped ZnO; DC magnetron sputtering; Transparent conducting oxide; c-axis orientation; Off-axis deposition;

D O I：

10.1016/j.matlet.2012.06.094

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Structural and electrical properties of off-axis DC magnetron sputtered Al2O3-doped ZnO (AZO) films were systematically investigated as a function of deposition distance from the center. With increasing distance, the AZO films showed an enhanced crystallinity and a denser microstructure with a smooth surface. The AZO film sputtered at the edge of the deposition stage (similar to 6 cm away from the center) showed the highest mobility (similar to 10.1 cm(2)/V s) and the lowest resistivity (similar to 2 x 10(-3) Omega cm) due to the high plasma and thermal power density, which was suitable for transparent conducting oxide applications. (c) 2012 Elsevier B.V. All rights reserved.

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页码：88 / 90

页数：3

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共 12 条

[1] Microstructure and photovoltaic performance of polycrystalline silicon thin films on temperature-stable ZnO:Al layers [J].

Becker, C. ;

Ruske, F. ;

Sontheimer, T. ;

Gorka, B. ;

Bloeck, U. ;

Gall, S. ;

Rech, B. .

JOURNAL OF APPLIED PHYSICS, 2009, 106 (08)

[2] A simple solution to systematic errors in density determination by X-ray reflectivity: The XRR-density evaluation (XRR-DE) method [J].

Bergese, P. ;

Bontempi, E. ;

Bepero, L. E. .

APPLIED SURFACE SCIENCE, 2006, 253 (01) :28-32

[3] Transparent conducting oxides for photovoltaics [J].

Fortunato, Elvira ;

Ginley, David ;

Hosono, Hideo ;

Paine, David C. .

MRS BULLETIN, 2007, 32 (03) :242-247

[4] Transparent conducting aluminum-doped zinc oxide thin films for organic light-emitting devices [J].

Kim, H ;

Gilmore, CM ;

Horwitz, JS ;

Piqué, A ;

Murata, H ;

Kushto, GP ;

Schlaf, R ;

Kafafi, ZH ;

Chrisey, DB .

APPLIED PHYSICS LETTERS, 2000, 76 (03) :259-261

[5] Amorphous structure and electrical performance of low-temperature annealed amorphous indium zinc oxide transparent thin film transistors [J].

Lee, Sunghwan ;

Bierig, Brian ;

Paine, David C. .

THIN SOLID FILMS, 2012, 520 (10) :3764-3768

[6] A study of the specific contact resistance and channel resistivity of amorphous IZO thin film transistors with IZO source-drain metallization [J].

Lee, Sunghwan ;

Park, Hongsik ;

Paine, David C. .

JOURNAL OF APPLIED PHYSICS, 2011, 109 (06)

[7] HIGHLY CONDUCTIVE AND TRANSPARENT ALUMINUM DOPED ZINC-OXIDE THIN-FILMS PREPARED BY RF MAGNETRON SPUTTERING [J].

MINAMI, T ;

NANTO, H ;

TAKATA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (05) :L280-L282

[8] Transparent conducting zinc-co-doped ITO films prepared by magnetron sputtering [J].

Minami, T ;

Yamamoto, T ;

Toda, Y ;

Miyata, T .

THIN SOLID FILMS, 2000, 373 (1-2) :189-194

[9] Present status and future prospects for development of non- or reduced-indium transparent conducting oxide thin films [J].

Minami, Tadatsugu ;

Miyata, Toshihiro .

THIN SOLID FILMS, 2008, 517 (04) :1474-1477

[10] Plasma influence on the properties and structure of indium tin oxide films produced by reactive middle frequency pulsed magnetron sputtering [J].

Rogozin, A ;

Vinnichenko, M ;

Shevchenko, N ;

Kolitsch, A ;

Möller, W .

THIN SOLID FILMS, 2006, 496 (02) :197-204