Influence of Ni doping on the electrical and structural properties of FeSb2

被引：8

作者：

Janaki, J. ^{[1
]}

Mani, Awadhesh ^{[1
]}

Satya, A. T. ^{[1
]}

Kumary, T. Geetha ^{[1
]}

Kalavathi, S. ^{[1
]}

Bharathi, A. ^{[1
]}

机构：

[1] Indira Gandhi Ctr Atom Res, Mat Sci Grp, Condensed Matter Phys Div, Kalpakkam 603102, Tamil Nadu, India

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2012年 / 249卷 / 09期

关键词：

electronic transport; FeSb2; Kondo insulators; localized electronic states; CONDUCTIVITY; SYSTEMS;

D O I：

10.1002/pssb.201248049

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The influence of increasing Ni doping on the structural and magneto-transport properties of FeSb2 have been investigated by synthesizing Fe1-xNixSb2 samples with x?=?00.4 using solid-state reaction method. The samples are single phase from x?=?00.1 with the marcasite (FeS2)-type structure. Beyond x?>?0.2 the skutterudite (CoAs3)-type phase starts progressively separating out apart from the required marcasite phase. The temperature-dependent electrical resistivity studies in the range 4.2300?K reveal activation behavior in the high-temperature (HT) regime (T?>?70?K) with a narrow gap. The gap value increases with Ni content x. In contrast, a variable-range hopping (VRH) type transport is seen in the low-temperature (LT) regime. The VRH parameter T0 progressively diminishes with increasing x. A detailed analysis of magnetoresistance using the ShklovskiiEfros model in the VRH regime indicates the increase of localization length with increasing Ni content. An insulator to metal transition is observed in the LT regime for x?=?0.1. This is ascribed to arise on account of delocalization of localized states within the gap.

引用

页码：1756 / 1760

页数：5

共 16 条

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