Highly transparent and resistive nanocrystalline ZnO-SnO2 films prepared by rf magnetron sputtering

被引：5

作者：

Cha, Chun-Nam ^{[2
,3
]}

Choi, Mu-Hee ^{[1
,2
]}

Ma, Tae-Young ^{[1
,2
]}

机构：

[1] Gyeongsang Natl Univ, Dept Elect Engn, Jinju, South Korea

[2] Gyeongsang Natl Univ, ERI, Jinju, South Korea

[3] Gyeongsang Natl Univ, Div Ind Syst Engn, Jinju, South Korea

来源：

JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY | 2012年 / 7卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

AFM; Rf magnetron sputtering; SEM; transmittance; XRD; ZnO-SnO2; films; TIN OXIDE-FILMS;

D O I：

10.5370/JEET.2012.7.4.596

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

ZnO-SnO2 films were deposited by rf magnetron sputtering using a ZnO-SnO2 (2:1 molar ratio) target. The target was made from a mixture of ZnO and SnO2 powders calcined at 800 degrees C. The working pressure was 1 mTorr, and the rf power was 120 W. The ratio of oxygen to argon (O-2:Ar) was varied from 0% to 10%, and the substrate temperature was varied from 27 degrees C to 300 degrees C. The crystallographic properties and the surface morphologies of the films were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force spectroscopy (AFM). The ZnO-SnO2 films deposited in O-2:Ar = 10% exhibited resistivity higher than 10(6) Omega cm and transmittance of more than 80% in the visible range.

引用

页码：596 / 600

页数：5

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