Self-assembled monolayer growth on chemically modified polymer surfaces

被引:9
作者
Pimanpang, S [1 ]
Wang, PI
Wang, GC
Lu, TM
机构
[1] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA
[2] Rensselaer Polytech Inst, Ctr Integrated Elect, Troy, NY 12180 USA
关键词
SiLK; self-assembled monolayer; plasma treatment; AFM; XPS; contact angle;
D O I
10.1016/j.apsusc.2005.05.049
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report a study of the self-assembled monolayer (SAM) growth of bis[3(triethoxysilane)propyl]tetrasulfide (Tetrasulfide) on low dielectric constant (low-k) aromatic hydrocarbon SiLK whose surface chemistry was modified using sulfuric acid, He plasma treatment, and N-2 plasma treatment. X-ray photoelectron spectroscopy (XPS) spectra show that there is no detectable growth of Tetrasulfide SAM on untreated SiLK surfaces. After the SiLK surfaces have been treated with sulfuric acid, He plasma, or N-2 plasma, the original chemically inert polymer surfaces are functionalized with polar groups resulting in a significant improvement of their wettability, which is confirmed by their reduction of water droplet contact angles. The introduction of polar functional groups thus facilitates the fort-nation of Tetrasulfide SAM on the polymer surfaces. Atomic force microscopy (AFM) analysis shows an insignificant change in the surface morphology after the growth of Tetrasulfide SAM on the chemically modified SiLK surfaces. Quantitative XPS analysis also showed that Tetrasulfide SAM growth is more prominent on He and N-2 plasma treated surfaces than those treated by sulfuric acid. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:3532 / 3540
页数:9
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