Site selective copper and silver electroless metallization facilitated by a photolithographically patterned hydrogen silsesquioxane mediated seed layer

被引：0

作者：

Harkness, BR

Rudolph, M

Takeuchi, K

机构：

[1] Dow Corning Corp, Midland, MI 48686 USA

[2] Dow Corning Asia Ltd, Res Ctr, Kanagawa 25801, Japan

来源：

CHEMISTRY OF MATERIALS | 2002年 / 14卷 / 04期

关键词：

D O I：

10.1021/cm010373e

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Patterned hydrogen silsesquioxane films have been used as templates for directed metallization of nonconductive discontinuous surfaces. Exposure of the surface to palladium(II) or silver(I) salt solutions results in silyl hydride si te selective palladium or silver metal deposition on the HSQ exposed regions. This sitespecific metal seed layer has been successfully used as a catalyst for the deposition of copper and silver films by electroless metallization processes.

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页码：1448 / 1451

页数：4

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